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- Title
Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory.
- Authors
Yue Bai; Huaqiang Wu; Riga Wu; Ye Zhang; Ning Deng; Zhiping Yu; He Qian
- Abstract
Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlOδ/Ta2O5-x/TaO5 resistive randomaccessmemories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance (e.g. .1000X HRS/LRS windows, .1010 endurance cycles, .104 s retention times at 125°C). Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme (CCS) and voltage controlled scheme (VCS). The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.
- Subjects
VOLTAGE-controlled oscillators; VOLTAGE control; COMPUTER storage devices; COMPUTER storage capacity; THREE-dimensional display systems
- Publication
Scientific Reports, 2014, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep05780