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- Title
Only the chemical state of Indium changes in Mn-doped In<sub>3</sub>Sb<sub>1</sub>Te<sub>2</sub> (Mn: 10 at.%) during multi-level resistance changes.
- Authors
Lee, Y. M.; Ahn, D.; Kim, J.-Y.; Kim, Y. S.; Cho, S.; Ahn, M.; Cho, M.-H.; Jung, M. S.; Choi, D. K.; Jung, M.-C.; Qi, Y. B.
- Abstract
We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In3Sb1Te2 (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ∼10 kΩsq (amorphous), ∼0.2 kΩsq (first phase-change), and ∼10Ωsq (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms.
- Subjects
INDIUM; MIST (Atmospheric chemistry); SYNCHROTRON radiation; THIN films; PHOTOELECTRON spectroscopy
- Publication
Scientific Reports, 2014, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep04702