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- Title
Controllable terahertz wave attenuator.
- Authors
Jiusheng Li; Jianquan Yao
- Abstract
A new type of optically controllable terahertz wave attenuator using high-resistivity silicon wafer is developed and tested. Without optical excitation, the high-resistivity silicon is a lossless dielectric material at terahertz wave region. When the high-resistivity silicon wafer is optically excited, free carriers are generated, and the silicon wafer becomes a lossy dielectric. We study theoretically and demonstrate experimentally light-controllable terahertz wave of the high-resistivity silicon wafer. The results show that more than 10-dB attenuation of the novel terahertz wave attenuator is obtained at frequency of 0.3 THz. The proposed device can be used in future terahertz wave communication systems. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1810–1812, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23528
- Subjects
TERAHERTZ spectroscopy; SPECTRUM analysis; TERAHERTZ technology; HIGH technology; NEUTRAL density filters; RADIO attenuators
- Publication
Microwave & Optical Technology Letters, 2008, Vol 50, Issue 7, p1810
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.23528