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- Title
Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In<sub>2</sub>Se<sub>3</sub> Ferroelectric Tunnel Junctions (Adv. Funct. Mater. 34/2024).
- Authors
Luo, Yingjie; Chen, Jiwei; Abbas, Aumber; Li, Wenbo; Sun, Yueyi; Sun, Yihong; Yi, Jianxian; Lin, Xiankai; Qiu, Guitian; Wen, Ruolan; Chai, Yang; Liang, Qijie; Zhou, Changjian
- Abstract
In the article "Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In2Se3 Ferroelectric Tunnel Junctions," Qijie Liang, Changjian Zhou, and their colleagues explore the integration of 2D semiconducting electrodes and ferroelectrics to create temperature-independent ferroelectric tunnel junctions. These junctions exhibit giant tunnel electroresistance, negative differential resistance, enhanced robustness, and gate programmability. The study provides valuable insights into achieving superior performance by using diverse electrodes, with potential applications in memristive and in-memory computing.
- Subjects
NONVOLATILE memory; FERROELECTRIC crystals; SEMICONDUCTORS; ELECTRODES; TUNNEL junctions (Materials science)
- Publication
Advanced Functional Materials, 2024, Vol 34, Issue 34, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202407253