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- Title
Atomic Layer Deposition of Epitaxial Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
- Authors
Cho, Jung Woo; Song, Myeong Seop; Choi, In Hyeok; Go, Kyoung‐June; Han, Jaewoo; Lee, Tae Yoon; An, Chihwan; Choi, Hyung‐Jin; Sohn, Changhee; Park, Min Hyuk; Baek, Seung‐Hyub; Lee, Jong Seok; Choi, Si‐Young; Chae, Seung Chul
- Abstract
The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting prospects for next‐generation memory devices. However, the practical implementation, particularly its epitaxial stabilization and a clearer understanding of its intrinsic ferroelectricity has been a significant challenge. The study arouses the potential importance of atomic layer deposition (ALD) for mass production in modern industries, demonstrating its proficiency in achieving epitaxial growth of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films on Yttria‐stabilized zirconia (YSZ) substrates. Moreover, with distinct ferroelectric switching currents, the work reveals the ferroelectric characteristics of epitaxial HZO thin films deposited through ALD on YSZ‐buffered Si substrates, which aligns well with CMOS technology. Overall, the results pave the way for a scalable synthesis system for ferroelectric HfO2‐based materials, hinting at a bright future for low‐temperature epitaxial nanoelectronics.
- Subjects
ATOMIC layer deposition; FERROELECTRIC thin films; EPITAXIAL layers; EPITAXY; FERROELECTRIC materials; LEAD alloys
- Publication
Advanced Functional Materials, 2024, Vol 34, Issue 24, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202314396