We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Highly Enhanced Polarization Switching Speed in HfO<sub>2</sub>‐based Ferroelectric Thin Films via a Composition Gradient Strategy.
- Authors
Hao, Puqi; Zheng, Shuaizhi; Zeng, Binjian; Yu, Tao; Yang, Zhibin; Liao, Luocheng; Peng, Qiangxiang; Yang, Qijun; Zhou, Yichun; Liao, Min
- Abstract
The next‐generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO2‐based ferroelectric thin films (FE‐HfO2) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE‐HfO2 remains a critical task. In this study, it is demonstrated that the composition‐graded Hf1‐xZrxO2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition‐uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization‐switching dynamics shifts from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the composition‐graded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance.
- Subjects
FERROELECTRIC thin films; SEMICONDUCTOR storage devices; ELECTRICAL conductivity transitions; THIN films; SPEED
- Publication
Advanced Functional Materials, 2023, Vol 33, Issue 31, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202301746