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- Title
The effect of medium doses electron irradiation on the scattering of charge carriers in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> single crystal.
- Authors
Khadzhai, G. Ya.; Goulatis, I.; Chroneos, A.; Kislitsa, M. V.; Kamchatna, S. M.; Feher, A.; Vovk, R. V.
- Abstract
The influence of electron irradiation with energies of 0.5–2.5 MeV with fluences up to 70 × 1018 cm–2 on the electrical resistivity in the basal plane of YBa2Cu3O7–δ single crystals in the temperature range from the superconducting transition, Tc, to 300 K has been studied. Such irradiation leads to the appearance of a significant number of defects that cause a decrease in anisotropy, an appreciable increase in phonon scattering, reduction of Tc, and broadening of the superconducting transition. Under the conditions specified, the temperature dependence of electrical resistivity is approximated with high accuracy by the charge carriers’ scattering on defects and phonons, and fluctuating conductivity in the Lawrence-Doniach (LD) model. The dependences of approximation parameters on fluence are discussed.
- Publication
Journal of Materials Science: Materials in Electronics, 2024, Vol 35, Issue 17, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-024-12867-z