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- Title
Defect Structure of High-Temperature-Grown GaMnSb/GaSb.
- Authors
Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J. Z.; Sadowski, J.; Wojciechowski, T.; Barcz, A.; Jakiela, R.; Caliebe, W.
- Abstract
GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0:07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
- Subjects
X-ray diffraction; FERROMAGNETISM; MASS spectrometry; IONS; MANGANESE; TRANSITION metals; GALLIUM; ANTIMONY; INTERMEDIATES (Chemistry)
- Publication
Acta Physica Polonica: A, 2010, Vol 117, Issue 2, p341
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.117.341