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- Title
Midinfrared Injection-Pumped Laser Based on a III–V/II–VI Hybrid Heterostructure with Submonolayer InSb Insets.
- Authors
Solov'ev, V. A.; Sedova, I. V.; Lyublinskaya, O. G.; Semenov, A. N.; Mel'tser, B. Ya.; Sorokin, S. V.; Terent'ev, Ya. V.; Ivanov, S. V.
- Abstract
Lasing at 3.075μm(T=60K) in a regime of pulsed injection pumping has been obtained in an AlGaAsSb/InAs/CdMgSe double hybrid heterostructure with the active region comprising an InAs layer with submonolayer InSb insets. The electroluminescence (EL) spectrum of the heterostructure has been studied for various values of the pumping current up to the stimulated emission threshold. An increase in the pumping current leads to a short-wavelength shift and a change in the EL band structure, which is explained by the occupation of higher states by the charge carriers in InSb quantum dots and/or in the adjacent InAsSb layer. © 2005 Pleiades Publishing, Inc.
- Subjects
ELECTROLUMINESCENCE; HETEROSTRUCTURES; CHARGE exchange; QUANTUM dots; QUANTUM electronics; SEMICONDUCTORS
- Publication
Technical Physics Letters, 2005, Vol 31, Issue 3, p235
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1894443