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- Title
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors.
- Authors
Nam, Sooji; Jeong, Yong Jin; Kim, Joo Yeon; Yang, Hansol; Jang, Jaeyoung
- Abstract
Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.
- Subjects
GRAPHENE oxide; DIELECTRICS; ORGANIC field-effect transistors
- Publication
Applied Sciences (2076-3417), 2019, Vol 9, Issue 1, p2
- ISSN
2076-3417
- Publication type
Article
- DOI
10.3390/app9010002