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- Title
A Systematic Study of Compositionally Dependent Dielectric Tensors of SnS x Se 1- x Alloys by Spectroscopic Ellipsometry.
- Authors
Nguyen, Xuan Au; Nguyen, Thi Minh Hai; Kim, Tae Jung; Le, Long Van; Nguyen, Tung Hoang; Kim, Bogyu; Kim, Kyujin; Lee, Wonjun; Cho, Sunglae; Kim, Young Dong; Lukáč, Pavel
- Abstract
We report the dielectric tensors on the cleavage plane of biaxial SnSxSe1-x alloys in the spectral energy region from 0.74 to 6.42 eV obtained by spectroscopic ellipsometry. Single-crystal SnSxSe1-x alloys were grown by the temperature-gradient method. Strongly anisotropic optical responses are observed along the different principal axes. An approximate solution yields the anisotropic dielectric functions along the zigzag (a-axis) and armchair (b-axis) directions. The critical point (CP) energies of SnSxSe1-x alloys are obtained by analyzing numerically calculated second derivatives, and their physical origins are identified by energy band structure. Blue shifts of the CPs are observed with increasing S composition. The fundamental bandgap for Se = 0.8 and 1 in the armchair axis arises from band-to-band transitions at the M0 minimum point instead of the M1 saddle point as in SnS. These optical data will be useful for designing optoelectronic devices based on SnSxSe1-x alloys.
- Subjects
ELLIPSOMETRY; ALLOYS; DIELECTRICS; DIELECTRIC function; OPTOELECTRONIC devices
- Publication
Crystals (2073-4352), 2021, Vol 11, Issue 5, p548
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst11050548