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- Title
A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap.
- Authors
Liu, An-Chen; Lai, Yung-Yu; Chen, Hsin-Chu; Chiu, An-Ping; Kuo, Hao-Chung
- Abstract
In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes. As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis Substrate Technology (QST®) substrate for breakdown voltage to achieve 650 V in 2020, which was further improved to 1200 V by superlattice and carbon-doped in 2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) for GaN on Si HEMT epitaxy structure and the process by implementing a three-layer field plate to improve dynamic on-resistance (RON). In 2019, Panasonic HD-GITs plus field version was utilized to effectively improve dynamic RON. Both reliability and dynamic RON have been enhanced by these improvements.
- Subjects
WIDE gap semiconductors; GALLIUM nitride; EPITAXY; CHEMICAL vapor deposition; BREAKDOWN voltage; COMPLEMENTARY metal oxide semiconductors; MODULATION-doped field-effect transistors
- Publication
Micromachines, 2023, Vol 14, Issue 4, p764
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi14040764