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- Title
Enhanced Thermoelectric Properties in Cu-Doped c-Axis-Oriented Ca<sub>3</sub> Co<sub>4</sub> O<sub>9+δ</sub> Thin Films.
- Authors
Wei, Renhuai; Jian, Hongbin; Tang, Xianwu; Yang, Jie; Hu, Ling; Chen, Li; Dai, Jianming; Zhu, Xuebin; Sun, Yuping; Zhou, X. ‐ D.
- Abstract
Highly c-axis-oriented Ca3 Co4− x Cu x O9+δ ( x = 0, 0.1, 0.2, and 0.3) thin films were prepared by chemical solution deposition on LaAlO3 (001) single-crystal substrates. X-ray diffraction, field-emission scanning electronic microscopy, X-ray photoelectron spectroscopy, and ultraviolet-visible absorption spectrums were used to characterize the derived thin films. The solubility limit of Cu was found to be less than 0.2, above which [ Ca2( Co0.65 Cu0.35)2 O4]0.624 CoO2 with quadruplicated rock-salt layers was observed. The electrical resistivity decreased monotonously with increasing Cu-doping content when x ≤ 0.2, and then slightly increased with further Cu doping. The Seebeck coefficient was enhanced from ~100 μV/K for the undoped thin film to ~120 μV/K for the Cu-doped thin films. The power factor was enhanced for about two times at room temperature by Cu doping, suggesting that Cu-doped Ca3 Co4 O9+δ thin films could be a promising candidate for thermoelectric applications.
- Subjects
THERMOELECTRICITY; COPPER films; DOPED semiconductors; COBALT oxides; CHEMICAL solution deposition; SINGLE crystals; X-ray diffraction
- Publication
Journal of the American Ceramic Society, 2013, Vol 96, Issue 8, p2396
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/jace.12415