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- Title
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors.
- Authors
Malin, T. V.; Milakhin, D. S.; Aleksandrov, I. A.; Zemlyakov, V. E.; Egorkin, V. I.; Zaitsev, A. A.; Protasov, D. Yu.; Kozhukhov, A. S.; Ber, B. Ya.; Kazantsev, D. Yu.; Mansurov, V. G.; Zhuravlev, K. S.
- Abstract
It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.
- Subjects
BUFFER layers; MODULATION-doped field-effect transistors; MOLECULAR beam epitaxy; POINT defects
- Publication
Technical Physics Letters, 2019, Vol 45, Issue 8, p761
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785019080108