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- Title
Relaxation oscillations and damping factors of 1.3 µm In(Ga)As/GaAs quantum-dot lasers.
- Authors
Mao, M.-H.; Wu, T.-Y.; Wu, D.-C.; Chang, F.-Y.; Lin, H.-H.
- Abstract
In(Ga)As/GaAs quantum-dot (QD) lasers with emission wavelength at 1295 nm at room temperature are fabricated. The laser active region contains a threefold stack of QD layers with surface dot density of 4.56 × 1010 cm-2. The laser structure is aluminum-free with InGaP as cladding layers. Threshold current density of a narrow stripe laser of 8 µm wide and 3.5 mm long is 152.5 A/cm2. The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz due to the small damping factor. From the above measurement, the differential gain and gain compression factor were extracted to be 4.3 × 10-16 cm2 and 3.4 × 10-17 cm3, respectively. Using these parameters, the maximum modulation bandwidthf3 dB max is estimated as 7.9 GHz.
- Subjects
QUANTUM theory; LASERS; OPTOELECTRONIC devices; OSCILLATIONS; DAMPING (Mechanics); ELECTRONICS
- Publication
Optical & Quantum Electronics, 2004, Vol 36, Issue 10, p927
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-004-2742-z