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- Title
Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method.
- Authors
Parfenteva, I.; Pugachev, B.; Pavlov, V.; Kozlova, Yu.; Knyazev, C.; Yugova, T.
- Abstract
The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 10 cm in low-angle boundaries to 6 × 10 cm in subboundaries.
- Subjects
CRYSTALS; GALLIUM arsenide; ACETYLENE crystals; GALLIUM compounds; ARSENIDES
- Publication
Crystallography Reports, 2017, Vol 62, Issue 2, p275
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774517020201