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- Title
Investigation of carrier spill-over in In Ga N-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage.
- Authors
Han, Dong‐Pyo; Kang, Min‐Goo; Oh, Chan‐Hyoung; Kim, Hyunsung; Kim, Kyu‐Sang; Shin, Dong‐Soo; Shim, Jong‐In
- Abstract
In InGaN-based light-emitting diodes (LEDs), carrier leakage to the outside of the active quantum wells (QWs) has been considered as one of the dominant carrier loss mechanisms at high current densities. In order to verify the carrier spill-over phenomenon, we compared the electroluminescence (EL) efficiency, the resonant photoluminescence (PL) efficiency, and the open-circuit voltage as functions of current, temperature, and excitation laser power. Very similar tendencies were experimentally observed among the three physical quantities, which implied that carriers were spilt over out of the QWs even in the resonant PL experiment.
- Subjects
LIGHT emitting diodes; QUANTUM wells; OPEN-circuit voltage; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2013, Vol 210, Issue 10, p2204
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201329187