Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleElectronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping.AuthorsBoonchun, Adisak; Lambrecht, Walter R. L.AbstractOur recent calculations of the oxygen vacancy in ZnO based on the local density approximation with Hubbard U corrections (LDASubjectsZINC oxide spectra; OPTICAL properties of zinc oxide; SEMICONDUCTOR doping; OPTICAL properties of nitrogen; SEMICONDUCTOR doping profilesPublicationPhysica Status Solidi (B), 2013, Vol 250, Issue 10, p2091ISSN0370-1972Publication typeArticleDOI10.1002/pssb.201370567