We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Reactive Diffusion in the Re-Si System.
- Authors
Roy, Soumitra; Paul, Aloke
- Abstract
A study on reactive diffusion is conducted in the Re-Si system. According to the study, ReSi phase grows with much higher thickness than the ReSi phase, in the interdiffusion zone of bulk diffusion couples. The activation energy for integrated diffusion of ReSi is estimated to be 605 ± 23 kJ/mol. The growth of the ReSi phase is studied by considering an incremental diffusion couple of Re/ReSi. Analysis based on the calculation of integrated diffusion coefficients indicates the reason underlying the observed high difference between the growth rates of the ReSi and ReSi phases.
- Subjects
RHENIUM alloys; CRYSTAL defects; DIFFUSION coefficients; PHASE diagrams; ACTIVATION energy; THICKNESS measurement; METAL microstructure
- Publication
Journal of Phase Equilibria & Diffusion, 2014, Vol 35, Issue 5, p631
- ISSN
1547-7037
- Publication type
Article
- DOI
10.1007/s11669-014-0334-6