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- Title
DISSIPATION OF CHARGES IN SILICON NANOCRYSTALS EMBEDDED IN SiO<sub>2</sub> DIELECTRIC FILMS:: AN ELECTROSTATIC FORCE MICROSCOPY STUDY.
- Authors
NG, C. Y.; LAU, H. W.; CHEN, T. P.; TAN, O. K.; LIM, V. S. W.
- Abstract
In this paper, we report a mapping of charge transport in silicon nanocrystals (nc-Si) embedded in SiO2 dielectric films with electrostatic force microscopy (EFM). By using contact EFM mode, positive and negative charges can be deposited on nc-Si. We found that the charge diffusion from the charged nc-Si to the surrounding neighboring uncharged nc-Si is the dominant mechanism during charge decay. A longer decay time was observed for a wider area of stored charge (i.e. 3 charged spots) due to the diffusion of charges being blocked by the surrounding charged nc-Si. This result is consistent with the increase of charge cloud size during the charge decay and the lower charge change percentage for 3 charged spots.
- Subjects
DIELECTRIC films; NANOCRYSTALS; SILICON oxide; ELECTROSTATICS; NANOPARTICLES
- Publication
International Journal of Nanoscience, 2005, Vol 4, Issue 4, p709
- ISSN
0219-581X
- Publication type
Article
- DOI
10.1142/S0219581X05003541