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- Title
Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model.
- Authors
Sall, M.; Monnet, I.; Moisy, F.; Grygiel, C.; Jublot-Leclerc, S.; Della-Negra, S.; Toulemonde, M.; Balanzat, E.
- Abstract
AlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors.
- Subjects
NITROGEN; ALUMINUM nitride; SEMICONDUCTORS; IRRADIATION; HEAVY ions; FULLERENES; INELASTIC scattering; GALLIUM nitride
- Publication
Journal of Materials Science, 2015, Vol 50, Issue 15, p5214
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-015-9069-y