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- Title
Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices.
- Authors
Korolev, Dmitry S.; Kriukov, Ruslan N.; Matyunina, Kristina S.; Nikolskaya, Alena A.; Belov, Alexey I.; Mikhaylov, Alexey N.; Sushkov, Artem A.; Pavlov, Dmitry A.; Tetelbaum, David I.
- Abstract
The ion-beam synthesis of Ga2O3 nanocrystals in dielectric matrices on silicon is a novel and promising way for creating nanomaterials based on gallium oxide. This research studies the regularities of changes, depending on the synthesis regimes used, in the chemical composition of ion-implanted SiO2/Si and Al2O3/Si samples. It has been shown that the formation of Ga-O chemical bonds occurs even in the absence of thermal annealing. We also found the conditions of ion irradiation and annealing at which the content of oxidized gallium in the stochiometric state of Ga2O3 exceeds 90%. For this structure, the formation of Ga2O3 nanocrystalline inclusions was confirmed by transmission electron microscopy.
- Subjects
CHEMICAL structure; GALLIUM; NANOCRYSTALS; TRANSMISSION electron microscopy; DIELECTRICS; SILICON isotopes; GALLIUM alloys
- Publication
Nanomaterials (2079-4991), 2023, Vol 13, Issue 10, p1658
- ISSN
2079-4991
- Publication type
Article
- DOI
10.3390/nano13101658