We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C.
- Authors
Chen, S. M.; Tang, M. C.; Wu, J.; Jiang, Q.; Dorogan, V. G.; Benamara, M.; Mazur, Y. I.; Salamo, G. J.; Seeds, A. J.; Liu, H.
- Abstract
A high-performance 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers (DFLs). The Si-based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature.
- Subjects
QUANTUM dots; SUPERLATTICES; FILTERS &; filtration; LASERS; COLD fusion
- Publication
Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 20, p1467
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2014.2414