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Human chromosome 3: integration of 60 NotI clones into a physical and gene map.
Published in:
Cytogenetic & Genome Research, 2002, v. 98, n. 2/3, p. 177, doi. 10.1159/000069814
By:
- Sulimova, G. E.;
- Kutsenko, A. S.;
- Rakhmanaliev, E. R.;
- Udina, I. G.;
- Kompaniytsev, A. A.;
- Protopopov, A. I.;
- Moisjak, E. V.;
- Klimov, E. A.;
- Muravenko, O. V.;
- Zelenin, A. V.;
- Braga, E. A.;
- Kashuba, V. I.;
- Zabarovsky, E. R.;
- Kisselev, L. L.
Publication type:
Article
Transcriptional Activity of Some Genes Involved in Apoptosis in Patients with Vulvar Lichen Sclerosus.
Published in:
Bulletin of Experimental Biology & Medicine, 2022, v. 172, n. 6, p. 734, doi. 10.1007/s10517-022-05467-6
By:
- Klimov, E. A.;
- Sobolev, V. V.;
- Batashkov, N. A.;
- Kokaeva, Z. G.;
- Tretiakov, A. V.;
- Nevozinskaya, Z. A.;
- Korsunskaya, I. M.;
- Sukhova, T. N.;
- Evina, O. E.;
- Khashukoeva, A. Z.
Publication type:
Article
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates.
Published in:
Crystallography Reports, 2020, v. 65, n. 3, p. 496, doi. 10.1134/S1063774520030104
By:
- Galiev, G. B.;
- Vasiliev, A. L.;
- Vasil'evskii, I. S.;
- Vinichenko, A. N.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Trunkin, I. N.;
- Pushkarev, S. S.
Publication type:
Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
Published in:
Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
By:
- Galiev, G. B.;
- Trunkin, I. N.;
- Vasiliev, A. L.;
- Vasil'evskii, I. S.;
- Vinichenko, A. N.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Maltsev, P. P.;
- Pushkarev, S. S.
Publication type:
Article
Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.
Published in:
Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104
By:
- Galiev, G.;
- Trunkin, I.;
- Klimov, E.;
- Klochkov, A.;
- Vasiliev, A.;
- Imamov, R.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
X-ray analysis of multilayer InAlAs/InGaAs/InAlAs HEMT heterostructures with InAs nanoinsert in quantum well.
Published in:
Crystallography Reports, 2017, v. 62, n. 3, p. 355, doi. 10.1134/S1063774517030026
By:
- Blagov, A.;
- Galiev, G.;
- Imamov, R.;
- Klimov, E.;
- Kondratev, O.;
- Pisarevskii, Yu.;
- Prosekov, P.;
- Pushkarev, S.;
- Seregin, A.;
- Koval'chuk, M.
Publication type:
Article
Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.
Published in:
Crystallography Reports, 2017, v. 62, n. 1, p. 82, doi. 10.1134/S1063774517010072
By:
- Galiev, G.;
- Klimov, E.;
- Vasiliev, A.;
- Imamov, R.;
- Pushkarev, S.;
- Trunkin, I.;
- Maltsev, P.
Publication type:
Article
Structural and electrophysical properties of InAlAs/InGaAs/InAlAs/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well.
Published in:
Crystallography Reports, 2015, v. 60, n. 3, p. 397, doi. 10.1134/S1063774515030062
By:
- Galiev, G.;
- Vasiliev, A.;
- Vasil'evskii, I.;
- Imamov, R.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Maltsev, P.;
- Pushkarev, S.;
- Trunkin, I.
Publication type:
Article
Erratum to: 'Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well'.
Published in:
2015
By:
- Galiev, G.;
- Vasiliev, A.;
- Imamov, R.;
- Klimov, E.;
- Maltsev, P.;
- Pushkarev, S.;
- Presniakov, M.;
- Trunkin, I.
Publication type:
Erratum
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well.
Published in:
Crystallography Reports, 2014, v. 59, n. 6, p. 900, doi. 10.1134/S1063774514060108
By:
- Galiev, G.;
- Vasiliev, A.;
- Imamov, R.;
- Klimov, E.;
- Maltsev, P.;
- Pushkarev, S.;
- Presniakov, M.;
- Trunkin, I.
Publication type:
Article
Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures InAlAs/InGaAs/InAlAs containing superlattices with different numbers of periods in the metamorphic buffer.
Published in:
Crystallography Reports, 2014, v. 59, n. 3, p. 425, doi. 10.1134/S1063774514030092
By:
- Galiev, G.;
- Pushkarev, S.;
- Orekhov, A.;
- Galiev, R.;
- Klimov, E.;
- Maltsev, P.;
- Imamov, R.
Publication type:
Article
X-Ray diffractometry of metamorphic nanoheterostructures.
Published in:
Crystallography Reports, 2014, v. 59, n. 2, p. 258, doi. 10.1134/S1063774514020096
By:
- Galiev, G.;
- Pushkarev, S.;
- Klimov, E.;
- Maltsev, P.;
- Imamov, R.;
- Subbotin, I.
Publication type:
Article
Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures.
Published in:
Crystallography Reports, 2013, v. 58, n. 6, p. 914, doi. 10.1134/S1063774513060114
By:
- Galiev, G. B.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Maltsev, P. P.;
- Pushkarev, S. S.;
- Zhigalina, O. M.;
- Imamov, R. M.;
- Kuskova, A. N.;
- Khmelenin, D. N.
Publication type:
Article
Structural and electrophysical analysis of MHEMT InAlAs/InGaAs nanoheterostructures with different strain distributions in metamorphic buffer.
Published in:
Crystallography Reports, 2012, v. 57, n. 6, p. 841, doi. 10.1134/S1063774512060028
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Klimov, E.;
- Imamov, R.;
- Subbotin, I.;
- Pavlenko, E.;
- Kvanin, A.
Publication type:
Article
Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates.
Published in:
Crystallography Reports, 2011, v. 56, n. 5, p. 875, doi. 10.1134/S1063774511050105
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Imamov, R.;
- Klimov, E.;
- Pushkarev, S.;
- Subbotin, I.
Publication type:
Article
Structural and electrical properties of quantum wells with nanoscale InAs inserts in InAlAs/InGaAs heterostructures on InP substrates.
Published in:
Crystallography Reports, 2011, v. 56, n. 2, p. 298, doi. 10.1134/S1063774511020180
By:
- Vasil'ev, A.;
- Vasil'evskii, I.;
- Galiev, G.;
- Imamov, R.;
- Klimov, E.;
- Kovalchuk, M.;
- Ponomarev, D.;
- Roddatis, V.;
- Subbotin, I.
Publication type:
Article
The electrical and structural properties of In yGa1 − yAs/In xAl1 − xAs/InP quantum wells with different InAs content.
Published in:
Crystallography Reports, 2010, v. 55, n. 1, p. 6, doi. 10.1134/S1063774510010025
By:
- Vasil'evskiĭ, I. S.;
- Galiev, G. B.;
- Mokerov, V. G.;
- Klimov, E. A.;
- Imamov, R. M.;
- Subbotin, I. A.
Publication type:
Article
Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier.
Published in:
Applied Physics A: Materials Science & Processing, 2012, v. 109, n. 1, p. 233, doi. 10.1007/s00339-012-7039-7
By:
- Požela, K.;
- Šilėnas, A.;
- Požela, J.;
- Jucienė, V.;
- Galiev, G.;
- Vasil'evskii, J.;
- Klimov, E.
Publication type:
Article
Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy.
Published in:
Journal of Communications Technology & Electronics, 2013, v. 58, n. 3, p. 243, doi. 10.1134/S1064226913030133
By:
- Yaremenko, N.;
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Karachevtseva, M.;
- Strakhov, V.
Publication type:
Article
Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1325, doi. 10.1134/S1063782620100164
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Matyushenko, E. V.;
- Neizvestny, I. G.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Epov, V.S.
Publication type:
Article
Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra.
Published in:
Semiconductors, 2020, v. 54, n. 11, p. 1417, doi. 10.1134/S1063782620110093
By:
- Galiev, G. B.;
- Klimov, E. A.;
- Pushkarev, S. S.;
- Zaytsev, A. A.;
- Klochkov, A. N.
Publication type:
Article
Optical and Transport Properties of Epitaxial Pb0.74Sn0.26Te(In) Films with a Modifiable Surface.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1086, doi. 10.1134/S1063782620090134
By:
- Ikonnikov, A. V.;
- Dudin, V. S.;
- Artamkin, A. I.;
- Akimov, A. N.;
- Klimov, A. E.;
- Tereshchenko, O. E.;
- Ryabova, L. I.;
- Khokhlov, D. R.
Publication type:
Article
Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime.
Published in:
Semiconductors, 2020, v. 54, n. 8, p. 951, doi. 10.1134/S1063782620080035
By:
- Akimov, A. N.;
- Akhundov, I. O.;
- Ishchenko, D. V.;
- Klimov, A. E.;
- Neizvestny, I. G.;
- Paschin, N. S.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Fedosenko, E. V.;
- Sherstyakova, V. N.
Publication type:
Article
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1272, doi. 10.1134/S1063782619090069
By:
- Ikonnikov, A. V.;
- Chernichkin, V. I.;
- Dudin, V. S.;
- Akopian, D. A.;
- Akimov, A. N.;
- Klimov, A. E.;
- Tereshchenko, O. E.;
- Ryabova, L. I.;
- Khokhlov, D. R.
Publication type:
Article
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1182, doi. 10.1134/S1063782619090094
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Epov, V. S.;
- Tereshchenko, O. E.
Publication type:
Article
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 246, doi. 10.1134/S1063782619020088
By:
- Galiev, G. B.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Kopylov, V. B.;
- Pushkarev, S. S.
Publication type:
Article
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1505, doi. 10.1134/S1063782618120035
By:
- Akimov, A. N.;
- Klimov, A. E.;
- Epov, V. S.
Publication type:
Article
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
Published in:
Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
By:
- Galiev, G. B.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Pushkarev, S. S.;
- Maltsev, P. P.
Publication type:
Article
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100
By:
- Galiev, G.;
- Klochkov, A.;
- Vasil'evskii, I.;
- Klimov, E.;
- Pushkarev, S.;
- Vinichenko, A.;
- Khabibullin, R.;
- Maltsev, P.
Publication type:
Article
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.
Published in:
Semiconductors, 2017, v. 51, n. 4, p. 503, doi. 10.1134/S1063782617040054
By:
- Galiev, G.;
- Pushkarev, S.;
- Buriakov, A.;
- Bilyk, V.;
- Mishina, E.;
- Klimov, E.;
- Vasil'evskii, I.;
- Maltsev, P.
Publication type:
Article
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates.
Published in:
Semiconductors, 2017, v. 51, n. 3, p. 310, doi. 10.1134/S1063782617030071
By:
- Galiev, G.;
- Grekhov, M.;
- Kitaeva, G.;
- Klimov, E.;
- Klochkov, A.;
- Kolentsova, O.;
- Kornienko, V.;
- Kuznetsov, K.;
- Maltsev, P.;
- Pushkarev, S.
Publication type:
Article
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 195, doi. 10.1134/S1063782616020081
By:
- Galiev, G.;
- Klimov, E.;
- Grekhov, M.;
- Pushkarev, S.;
- Lavrukhin, D.;
- Maltsev, P.
Publication type:
Article
Photoluminescence properties of modulation-doped InAlAs/InGaAs/InAlAs structures with strained inas and gaas nanoinserts in the quantum well.
Published in:
Semiconductors, 2015, v. 49, n. 9, p. 1207, doi. 10.1134/S1063782615090122
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.
Published in:
Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131
By:
- Kulbachinskii, V.;
- Oveshnikov, L.;
- Lunin, R.;
- Yuzeeva, N.;
- Galiev, G.;
- Klimov, E.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures.
Published in:
Semiconductors, 2015, v. 49, n. 7, p. 911, doi. 10.1134/S1063782615070179
By:
- Lavrukhin, D.;
- Yachmenev, A.;
- Bugaev, A.;
- Galiev, G.;
- Klimov, E.;
- Khabibullin, R.;
- Ponomarev, D.;
- Maltsev, P.
Publication type:
Article
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 199, doi. 10.1134/S1063782615020165
By:
- Kulbachinskii, V.;
- Oveshnikov, L.;
- Lunin, R.;
- Yuzeeva, N.;
- Galiev, G.;
- Klimov, E.;
- Maltsev, P.
Publication type:
Article
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 234, doi. 10.1134/S1063782615020086
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Application of photoluminescence spectroscopy to studies of InAlAs/InGaAs/GaAs metamorphic nanoheterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 7, p. 883, doi. 10.1134/S1063782614070070
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.
Published in:
Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078
By:
- Galiev, G.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic InAlAs/InGaAs/InAlAs HEMT nanoheterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 63, doi. 10.1134/S1063782614010138
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Maltsev, P.
Publication type:
Article
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
By:
- Khabibullin, R. A.;
- Galiev, G. B.;
- Klimov, E. A.;
- Ponomarev, D. S.;
- Vasil’evskii, I. S.;
- Kulbachinskii, V. A.;
- Bokov, P. Yu.;
- Avakyants, L. P.;
- Chervyakov, A. V.;
- Maltsev, P. P.
Publication type:
Article
Persistent photoconductivity and electron mobility in InAlAs/InGaAs/InAlAs/InP quantum-well structures.
Published in:
Semiconductors, 2013, v. 47, n. 7, p. 935, doi. 10.1134/S1063782613070130
By:
- Kulbachinskii, V.;
- Lunin, R.;
- Yuzeeva, N.;
- Vasilievskii, I.;
- Galiev, G.;
- Klimov, E.
Publication type:
Article
Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations.
Published in:
Semiconductors, 2013, v. 47, n. 7, p. 997, doi. 10.1134/S1063782613070075
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Klimov, E.;
- Imamov, R.
Publication type:
Article
Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures.
Published in:
Semiconductors, 2013, v. 47, n. 4, p. 532, doi. 10.1134/S1063782613040076
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Zhigalina, O.;
- Klimov, E.;
- Zhigalina, V.;
- Imamov, R.
Publication type:
Article
Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts.
Published in:
Semiconductors, 2013, v. 47, n. 3, p. 372, doi. 10.1134/S1063782613030263
By:
- Šilenas, A.;
- Požela, Yu.;
- Požela, K.;
- Jucienė, V.;
- Vasil'evskii, I.;
- Galiev, G.;
- Pushkarev, S.;
- Klimov, E.
Publication type:
Article
Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts.
Published in:
Semiconductors, 2012, v. 46, n. 4, p. 484, doi. 10.1134/S1063782612040173
By:
- Ponomarev, D.;
- Vasil'evskii, I.;
- Galiev, G.;
- Klimov, E.;
- Khabibullin, R.;
- Kulbachinskii, V.;
- Uzeeva, N.
Publication type:
Article
Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density.
Published in:
Semiconductors, 2011, v. 45, n. 10, p. 1321, doi. 10.1134/S1063782611100125
By:
- Khabibullin, R.;
- Vasil'evskii, I.;
- Galiev, G.;
- Klimov, E.;
- Ponomarev, D.;
- Lunin, R.;
- Kulbachinskii, V.
Publication type:
Article
Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76-100% with their surface morphology and electrical properties.
Published in:
Semiconductors, 2011, v. 45, n. 9, p. 1158, doi. 10.1134/S1063782611090247
By:
- Vasil'evskii, I.;
- Galiev, G.;
- Klimov, E.;
- Kvanin, A.;
- Pushkarev, S.;
- Pushkin, M.
Publication type:
Article
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures.
Published in:
Semiconductors, 2011, v. 45, n. 9, p. 1169, doi. 10.1134/S1063782611090259
By:
- Vasil'evskii, I.;
- Galiev, G.;
- Klimov, E.;
- Požela, K.;
- Požela, J.;
- Jucienė, V.;
- Sužiedėlis, A.;
- Žurauskienė, N.;
- Keršulis, S.;
- Stankevič, V.
Publication type:
Article
Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures.
Published in:
Semiconductors, 2011, v. 45, n. 5, p. 657, doi. 10.1134/S1063782611050162
By:
- Khabibullin, R.;
- Vasil'evskii, I.;
- Galiev, G.;
- Klimov, E.;
- Ponomarev, D.;
- Gladkov, V.;
- Kulbachinskii, V.;
- Klochkov, A.;
- Uzeeva, N.
Publication type:
Article

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