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- Title
Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride.
- Authors
Liu, Wenjun; Zheng, Hemei; Ang, Kahwee; Zhang, Hao; Liu, Huan; Han, Jun; Liu, Weiguo; Sun, Qingqing; Ding, Shijin; Zhang, David Wei
- Abstract
Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on the atomic layer deposited AlN/SiO2/Si substrate is demonstrated. Electrical measurement results show that BP FETs on the AlN substrate possess superior electrical performance compared with those fabricated on the conventional SiO2/Si substrate. It exhibits a large on-off current ratio of 5 × 108, a low subthreshold swing of <0.26 V/dec, and a high normalized field-effect carrier mobility of 1071 cm2 V−1 s−1 in the temperature range from 77 to 400 K. However, these stable electrical performances are not found in the BP FETs on SiO2/Si substrate when the temperature increases up to 400 K; instead, the electrical performance of BP FETs on the SiO2/Si substrate degrades drastically. Furthermore, to gain a physical understanding on the stable performance of BP FETs on the AlN substrate, low-frequency noise analysis was performed, and it revealed that the AlN film plays a significant role in suppressing the lattice scattering and charge trapping effects at high temperatures.
- Subjects
THIN film transistors; FIELD-effect transistors; ALUMINUM nitride; PHONON scattering; ALUMINUM ores; ATOMIC scattering; INDIUM gallium zinc oxide
- Publication
Nanophotonics (21928606), 2020, Vol 9, Issue 7, p2053
- ISSN
2192-8606
- Publication type
Article
- DOI
10.1515/nanoph-2020-0075