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- Title
A steep switching WSe<sub>2</sub> impact ionization field-effect transistor.
- Authors
Choi, Haeju; Li, Jinshu; Kang, Taeho; Kang, Chanwoo; Son, Hyeonje; Jeon, Jongwook; Hwang, Euyheon; Lee, Sungjoo
- Abstract
The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slope impact ionization field-effect transistors (I2FETs) based on a gate-controlled homogeneous WSe2 lateral junction. The devices showed average SS down to 2.73 mV/dec over three decades of source-drain current and an on/off ratio of ~106 at room temperature and low bias voltages (<1 V). We determined that the lucky-drift mechanism of carriers is valid in WSe2, allowing our I2FETs to have high impact ionization coefficients and low SS at room temperature. Moreover, we fabricated a logic inverter based on a WSe2 I2FET and a MoS2 FET, exhibiting an inverter gain of 73 and almost ideal noise margin for high- and low-logic states. Our results provide a promising approach for developing functional devices as front runners for energy-efficient electronic device technology. The potential energy efficiency of impact ionization field-effect transistors (I2FETs) is usually limited by stringent operational conditions. Here, the authors report I2FETs based on 2D WSe2, showing average subthreshold slopes down to 2.3 mV/dec and on/off ratios of ~106 at room temperature and bias voltages <1 V.
- Subjects
IMPACT ionization; FIELD-effect transistors; FERMI-Dirac distribution; POTENTIAL energy; LOW temperatures
- Publication
Nature Communications, 2022, Vol 13, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-022-33770-3