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- Title
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates.
- Authors
Avakyants, L. P.; Bokov, P. Yu.; Kazakov, I. P.; Bazalevsky, M. A.; Deev, P. M.; Chervyakov, A. V.
- Abstract
The mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition (Eg) and the transition between the conduction band and spin-orbit-split valence subband (Eg + ΔSO) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz-Keldysh oscillations).
- Subjects
GALLIUM arsenide; SILICON; CRYSTAL growth; PHOTOREFLECTANCE; STRAINS &; stresses (Mechanics); MOLECULAR beam epitaxy
- Publication
Semiconductors, 2018, Vol 52, Issue 7, p849
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618070023