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- Title
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
- Authors
Blokhin, S.; Bobrov, M.; Blokhin, A.; Kuzmenkov, A.; Vasil'ev, A.; Zadiranov, Yu.; Evropeytsev, E.; Sakharov, A.; Ledentsov, N.; Karachinsky, L.; Ospennikov, A.; Maleev, N.; Ustinov, V.
- Abstract
The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.
- Subjects
SURFACE emitting lasers; QUANTUM wells; ENERGY-band theory of solids; HYDRAULIC structures; POTENTIAL theory (Physics)
- Publication
Semiconductors, 2018, Vol 52, Issue 1, p93
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618010062