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- Title
Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.
- Authors
Arsent’ev, I. N.; Baıdakova, M. V.; Bobyl’, A. V.; Vavilova, L. S.; Konnikov, S. G.; Ulin, V. P.; Boltovets, N. S.; Konakova, R. V.; Milenin, V. V.; Voıtsikhovskiı, D. I.
- Abstract
The structures comprising three epitaxial InP layers—buffer (n[sup ++]), active (n), and contact (n[sup +])— were grown by liquid phase epitaxy on porous and compact (control) InP(100) substrates. High quality of the active n-InP layer obtained on a porous substrate (in comparison to the control samples) is confirmed by the values of the halfwidths of the (311) X-ray diffraction reflections (54″ versus 76″), dislocation concentration (5 × 10² - 5 × 10³ cm[sup -2] versus 5 × 10[sup 4] - 5 × 10[sup 5] cm[sup -2]), and electron mobility (4000 cm²/V s versus 30003500 cm²/V s). Using these homoepitaxial InP structures, Au-Ti Schottky diodes with a working mesastructure area of ∼1.8 × 10[sup -6] cm² were prepared. It was found that diodes based on the porous substrates are characterized by significantly smaller leak currents and higher breakdown voltages as compared to those of the control diodes: 1 nA, 27 V versus 200 nA, 15 V.
- Subjects
INDIUM phosphide; SCHOTTKY barrier diodes
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 9, p735
- ISSN
1063-7850
- Publication type
Article