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- Title
Optical characteristics of porous silicon structures.
- Authors
Len'shin, A.; Kashkarov, V.; Seredin, P.; Agapov, B.; Minakov, D.; Tsipenyuk, V.; Domashevskaya, E.
- Abstract
Morphology, composition, and optical properties of porous silicon on single-crystal-silicon substrates and p- n junctions are studied. Substrate orientation, type of conduction, and composition of etching agent are varied to obtain nano-, meso-, and microporous silicon and multilayer porous structures. A correlation of the photoluminescence intensity and intensity of the IR absorption band peaking at 616 cm is related to the presence of Si-Si bonds.
- Subjects
OPTICAL properties of porous silicon; STRUCTURAL analysis (Engineering); SUBSTRATES (Materials science); P-N junctions (Semiconductors); METAL etching; PHOTOLUMINESCENCE
- Publication
Technical Physics, 2014, Vol 59, Issue 2, p224
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784214020145