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- Title
The Atomic Structure of Si(111)-[formula]R30°-Ga Determined by Automated Tensor Leed.
- Authors
Chen, Wenhua; Wu, Huasheng; Ho, Wing Kin; Deng, B. C.; Xu, Geng; Tong, S. Y.
- Abstract
The atomic structure of the Si(111)- (&radic3; × &radic3;)R30°-Ga surface has been studied by comparing measured low-energy electron diffraction (LEED) intensity (IV) curves with calculated IV spectra using the method of automated tensor LEED. The experimental LEED IV curves used in this work contain many beams and a wide energy range. The results show that the Ga atoms occupy T[sub 4] sites, at 2.62 Å above the second-atomic-layer Si atoms. The Ga-Si vertical spacing is 1.44 Å and the bond length between the Ga atom and the first-layer Si atom is 2.52 Å. Large bucklings are found in the first and second Si bilayers below the adatom layer.
- Subjects
ATOMIC structure; GALLIUM; SURFACE chemistry; GEOMETRIC surfaces
- Publication
Surface Review & Letters, 2000, Vol 7, Issue 3, p267
- ISSN
0218-625X
- Publication type
Article
- DOI
10.1142/S0218625X0000035X