We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Epitaxial Growth of Ge Nanofilms on the Surface of SrF<sub>2</sub>.
- Authors
Abraeva, S. T.; Tashmukhamedova, D. A.; Umirzakov, B. E.
- Abstract
The composition, structure, and optical parameters of a SrF2(111) single-crystal sample with a surface Ge nanofilm are studied using Auger-electron spectroscopy (in combination with surface etching with Ar+ ions and measuring the angular dependences of the coefficient of inelastic electron reflection η) and light-absorption spectroscopy. It is shown for the first time that preliminary bombardment of the SrF2 surface with Ar+ ions with E0 = 1 keV at T = 750 K makes it possible to obtain homogeneous epitaxial Ge nanofilms starting from a thickness of 30 Å. It is assumed that the transition layer formed at the Ge–SrF2 interface also has a cubic lattice with a parameter close to the lattice constants of Ge and SrF2.
- Publication
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, Vol 17, pS329
- ISSN
1027-4510
- Publication type
Article
- DOI
10.1134/S1027451023070029