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- Title
Designing a 30 to 1000 MHz 10 W GaN HEMT Power Amplifier Using a Novel Coaxial Impedance Transformer With Ferrite Beads.
- Authors
Boshnakov, Ivan; Dunleavy, Larry; DeMartino, Chris
- Abstract
The article focuses on the design of a single-stage, 10 W gallium nitride (GaN) high electron mobility transistors (HEMT) power amplifier (PA) with broadband performance from 30 MHz to 1 GHz using a novel coaxial impedance transformer with ferrite beads. Topics discussed include software tools and models used by the PA design, design process of PA, and complete schematic of the PA.
- Subjects
TRANSFORMER models; POWER amplifiers; COAXIAL cables; GALLIUM nitride; FERRITES; MODULATION-doped field-effect transistors; ELECTRIC transformers; POWER transformers
- Publication
Microwave Journal, 2023, Vol 66, Issue 9, p70
- ISSN
0192-6225
- Publication type
Article