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- Title
Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications.
- Authors
Tripathi, M. M.; Kumar, Ajay
- Abstract
This work presents, the modeling of small signal parameters for Gallium Nitride (GaN) based Buffered Trench Gate (BTG) MOSFET for wireless applications. To improve the device's performance, hafnium dioxide (HfO2) and silicon dioxide (SiO2) are stacked and placed in the trenched region and simultaneously compared with BTG-MOSFET and its conventional counterpart. The small signal modeling has been performed in terms of Y-parameters (admittance parameters) and S-parameters (scattering parameters) for all three devices and also compared the results. The main aim for selecting small signal parameters is to analyze the behavior of the device for wireless applications at microwave frequencies. Small signal modeling on the proposed device shows the improved results as compared to its conventional counterparts. Thus, results validate the suitable candidature of GaN-BTG MOSFET for high performance wireless application at microwave frequencies.
- Subjects
GALLIUM nitride; HAFNIUM oxide; SILICA; MICROWAVES
- Publication
Wireless Personal Communications, 2023, Vol 132, Issue 3, p2243
- ISSN
0929-6212
- Publication type
Article
- DOI
10.1007/s11277-023-10720-w