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- Title
The Effect of Clustering on the Melting of III–V Semiconductors.
- Authors
Bulyarskiı, S. V.; L’vov, P. E.; Svetukhin, V. V.
- Abstract
A thermodynamic model of cluster formation in the melts of binary semiconductor compounds is proposed. Cluster formation in the gallium arsenide melt is studied, and expressions for equilibrium concentrations of clusters of different size, as well as a liquidus equation, are obtained. In the limiting case of small cluster concentration, the latter equation is consistent with the results of the theory of quasi-chemical interaction. The system of equations derived enables the satisfactory description of experimental data on aftermelting and liquidus curves in gallium arsenide. The calculated values of the melting enthalpy and entropy agree well with data for the energy of dissociation.
- Subjects
GALLIUM arsenide semiconductors; FUSION (Phase transformation); ENTHALPY; ENTROPY
- Publication
Technical Physics, 2001, Vol 46, Issue 9, p1076
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/1.1404156