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- Title
Improving Epitaxial Growth of γ‐Al<sub>2</sub>O<sub>3</sub> Films via Sc<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> Oxide Buffers.
- Authors
Gougam, Sliman; Schubert, Markus Andreas; Stolarek, David; Thapa, Sarad Bahadur; Zoellner, Marvin Hartwig
- Abstract
Heteroepitaxial growth of γ‐Al2O3 on Sc2O3/Y2O3/Si (111) is achieved with oxygen plasma‐assisted molecular beam epitaxy in order to prevent polycrystalline grain boundary formation caused by lattice mismatch. Substrate temperature as well as oxygen flow are adjusted to optimize epitaxial growth conditions around 715–760 °C and 1.9 sccm, respectively. Epitaxial growth is monitored in situ by reflection high‐energy diffraction, while surface morphology is studied by scanning electron microscopy ex‐situ. X‐ray diffraction indicates epitaxial out‐of‐plane 111 orientation with oxygen flow above 0.6 sccm. However, transmission electron microscopy shows stacking fault formation for high oxygen flows. Finally, nanobeam electron diffraction confirms Smrčok model of a spinel‐like γ‐Al2O3 crystal structure.
- Subjects
EPITAXY; MOLECULAR beam epitaxy; TRANSMISSION electron microscopy; CRYSTAL grain boundaries; CRYSTAL structure; POLYCRYSTALLINE silicon
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2024, Vol 221, Issue 12, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202400228