We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Electrical properties of Sr[sub 3]Bi[sub 4]Ti[sub 6]O[sub 21] thin films.
- Authors
Zhang, S.T.; Yang, B.; Zhang, X.J.; Chen, Y.F.; Liu, Z.G.; Ming, N.B.; Pan, X.Q.
- Abstract
Highly c-axis-oriented (Sr[SUB3]Bi[SUB4]Ti[SUB6]O[SUB21] (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO[SUB3] STO could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P[SUBr]) and coercive field (E[SUBc]) values were 4.1 μC/cm[SUB2] and 75 kV/cm respectively. The films showed little fatigue after 2.22 × 10[SUP9] switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM).
- Subjects
THIN films; PULSED laser deposition; X-ray diffraction; ATOMIC force microscopy; SCANNING electron microscopy; HYSTERESIS loop
- Publication
Applied Physics A: Materials Science & Processing, 2003, Vol 77, Issue 5, p645
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-002-1594-2