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- Title
Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures.
- Authors
Tikhomirov, V.; Maleev, N.; Kuzmenkov, A.; Solov'ev, Yu.; Gladyshev, A.; Kulagina, M.; Zemlyakov, V.; Dudinov, K.; Yankevich, V.; Bobyl, A.; Ustinov, V.
- Abstract
The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures ( p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown.
- Subjects
MICROWAVES; FIELD-effect transistors; HETEROSTRUCTURES; GALLIUM arsenide; COMPUTER simulation; INTEGRATED software; SEMICONDUCTOR etching
- Publication
Semiconductors, 2011, Vol 45, Issue 10, p1352
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782611100216