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- Title
Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas.
- Authors
Antonov, A. V.; Gavrilenko, V. I.; Maremyanin, K. V.; Morozov, S. V.; Teppe, F.; Knap, W.
- Abstract
Resonance detection of terahertz radiation by submicrometer field-effect GaAs/AlGaAs transistors (with the gate length L = 250 nm) with two-dimensional electron gas in the channel has been studied at T = 4.2 K. For these transistors, it is shown for the first time that the maximum of the response (the drain-source photovoltage) shifts with an increasing frequency to the region of higher gate voltages in accordance with the Dyakonov-Shur theory. It is shown that, as temperature is increased to 77 K, the dependence of the photovoltage on the gate voltage becomes nonresonant, which is caused by a decrease in the mobility.
- Subjects
GALLIUM arsenide; TRANSISTORS; SEMICONDUCTORS; ELECTRON gas; ELECTRIC potential; TEMPERATURE
- Publication
Semiconductors, 2009, Vol 43, Issue 4, p528
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S106378260904023X