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- Title
Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.
- Authors
Voronina, T. I.; Zhurtanov, B. E.; Lagunova, T. S.; Mikhaılova, M. P.; Moiseev, K. D.; Rozov, A. E.; Yakovlev, Yu. P.
- Abstract
Magnetotransport properties of the narrow-gap In[sub x]Ga[sub 1-x]As[sub y]Sb[sub 1-y]/GaSb heterojunctions grown by liquid-phase epitaxy with various In content in the solid solution (x=0.85-0.95 and E[sub g] ≤ 0.4 eV) were studied. It is shown that, depending on the In content in these heterostructures, type II staggered-lineup (x = 0.85) or brokengap heterojunctions (x = 0.95) with high mobility in the electron channel at the interface (µ ... 20 000 cm²/(V s)) can be realized. For x = 0.92, depending on temperature, both types of heterojunctions were observed. Obtained results are in good agreement with the band energy diagram of the type II InGaAsSb/GaSb heterostructures under study.
- Subjects
SEMICONDUCTOR junctions; GALLIUM alloys; INDIUM alloys; EPITAXY
- Publication
Semiconductors, 2001, Vol 35, Issue 3, p331
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1356157