We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array.
- Authors
Wang, Shuai; Ye, Han; Geng, Liyan; Lu, Ziqing; Xiao, Feng; Xiao, Fan; Han, Qin
- Abstract
The design, fabrication, and characteristic analysis of a 64 × 64 InGaAs/InP single-photon avalanche diode (SPAD) array, which was developed for a three-dimensional (3D) imaging laser radar system at the wavelength of 1550 nm, are described. The source and physical mechanism of the dark current, photodetection efficiency, and dark count rate of the SPAD array are also analyzed and discussed. The SPAD array exhibits single-photon sensitivity when working in the Geiger mode. The diameter and pixel pitch of the diode in the array are 25 μm and 150 μm, respectively. The mean breakdown voltage of the diodes is 58.5 V, with a deviation of ± 1.5 V. The dark current at the breakdown voltage is in a range below 1 nA, The 25-μm-diameter SPAD shows a high single-photon detection efficiency of 25.72% at 1550 nm, and a low dark count rate of 9.09 kHz at 223 K.
- Subjects
AVALANCHE diodes; INDIUM gallium arsenide; OPTICAL radar; BREAKDOWN voltage; DIODES; SINGLE photon generation; LED displays; PIXELS
- Publication
Journal of Electronic Materials, 2022, Vol 51, Issue 5, p2692
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-022-09531-9