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- Title
Quasi-ideal Nonlinear Electrical Behavior of Polycrystalline SnO Ceramic Varistors Doped with SiO.
- Authors
Metz, R.; Hassanzadeh, M.; Mahesh, K.; Ananthakumar, S.
- Abstract
The influence of SiO doping on the microstructure and electrical behavior of SnO varistors has been studied. The varistor effect was studied over a wide range from 10 A to 10 A. It is shown that the J( E) characteristic of SnO ceramics exhibits a nonlinear coefficient >100. The SiO doping also resulted in a sharp-abrupt upturn region in the Iâ€' V characteristic, indicating a single semiconductor junction behavior. The leakage current of the varistors is rather low, on the order of 10 S m. In the upturn region of operation where the curve departs from the nonlinear relation and approaches the value of the bulk resistivity of the material, the ceramic is characterized by a current density almost independent of the applied voltage. A very small amount of SiO causes large perturbations of the conventional thermionic emission observed in varistor ceramic materials.
- Subjects
NONLINEAR electric circuits; POLYCRYSTALS; TIN oxides; CERAMIC metals; VARISTORS; SILICON oxide; MICROSTRUCTURE
- Publication
Journal of Electronic Materials, 2014, Vol 43, Issue 5, p1411
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3035-3