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- Title
High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.
- Authors
Malevskaya, A. V.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Salii, R. A.; Malevskii, D. A.; Nakhimovich, M. V.; Larionov, V. R.; Pokrovskii, P. V.; Shvarts, M. Z.; Andreev, V. M.
- Abstract
Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostractures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE = 37.5% at current densities greater than >10 A/cm2 have been fabricated.
- Subjects
OPTICAL reflectors; LIGHT emitting diodes; QUANTUM wells; QUANTUM efficiency; MIRRORS
- Publication
Semiconductors, 2023, Vol 57, Issue 5, p252
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S106378262307014X