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- Title
On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures.
- Authors
Grigoriev, M. V.; Ghazaryan, D. A.; Vdovin, E. E.; Khanin, Yu. N.; Morozov, S. V.; Novoselov, K. S.
- Abstract
Resonant tunneling through defect levels in the h-BN barrier of van-der-Waals heterostructures is investigated. The effect of multiplication of the tunneling resonances through these levels due to the effect of a high degree of imperfection of the structure of the neighboring graphene layer formed intentionally by its processing in plasma is found. Various mechanisms of such an effect are discussed.
- Subjects
RESONANT tunneling; HETEROSTRUCTURES; GRAPHENE; QUANTUM tunneling; IMPERFECTION; PLASMA materials processing
- Publication
Semiconductors, 2020, Vol 54, Issue 3, p291
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782620030082