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- Title
Orbital magneto-electronic heat capacity of hydrogenated graphene in the presence of dilute charged impurity.
- Authors
Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi; Feali, Mohammad Saeed
- Abstract
In this paper, the effect of dilute charged impurity and external magnetic field on orbital-resolved density of states (DOS) and electronic heat capacity (EHC) of a monolayer hydrogenated graphene which is called chair-like graphane is investigated within the Harrison model and Green's function technique. The self-consistent Born approximation has been implemented to describe the effect of scattering between electrons and dilute charged impurities. Our results show that the graphane is a semiconductor and its band gap decreases with impurity and magnetic field. EHC reaches almost linearly to Schottky anomaly and does not change at low temperatures in the presence of impurity and magnetic field. Generally, EHC increases with the mentioned parameters. Surprisingly, impurity doping only affects the salient behavior of orbital contribution of carbon atoms due to the symmetry breaking.
- Subjects
SCHOTTKY barrier; SEMICONDUCTOR-metal boundaries; MAGNETIC field effects; DILUTED magnetic semiconductors; MAGNETIC semiconductors
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, Vol 31, Issue 8, p-1
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979217500539