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Special issue on next‐gen AI and quantum technology.
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- ETRI Journal, 2024, v. 46, n. 5, p. 743, doi. 10.4218/etr2.12735
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 14, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication.
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- Electronics (2079-9292), 2023, v. 12, n. 20, p. 4347, doi. 10.3390/electronics12204347
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- Article
Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process.
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- Electronics (2079-9292), 2023, v. 12, n. 7, p. 1667, doi. 10.3390/electronics12071667
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- Article
Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions.
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- Sensors (14248220), 2019, v. 19, n. 24, p. 5549, doi. 10.3390/s19245549
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- Article
BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 173, doi. 10.1142/S0129156407004394
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- Article
BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES.
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- International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 437, doi. 10.1142/S012915640600376X
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- Article
INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-SiC SIT.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 285, doi. 10.1142/S0129156404003034
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- Article
SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD- PLATE SiC MESFETs.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 260, doi. 10.1142/S0129156404002995
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- Article
Electrical Properties of Horizontal Array Capacitor Using Composite Organic Dielectric Layer of Impregnated Glass-Fiber Epoxy.
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- Advances in Polymer Technology, 2020, p. 1, doi. 10.1155/2020/5601714
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- Article
Electrical Properties of Horizontal Array Capacitor Using Composite Organic Dielectric Layer of Impregnated Glass-Fiber Epoxy.
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- Advances in Polymer Technology, 2020, p. 1, doi. 10.1155/2020/5601714
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- Article
Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs.
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- Journal of Electromagnetic Engineering & Science, 2022, v. 22, n. 3, p. 291, doi. 10.26866/jees.2022.3.r.89
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- Article
Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 6, p. 1422, doi. 10.3390/nano11061422
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- Article
Normally-off β-Ga 2 O 3 MOSFET with an Epitaxial Drift Layer.
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- Micromachines, 2022, v. 13, n. 8, p. 1185, doi. 10.3390/mi13081185
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- Article
Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
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- Micromachines, 2021, v. 12, n. 5, p. 537, doi. 10.3390/mi12050537
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- Article
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode.
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- Micromachines, 2021, v. 12, n. 3, p. 291, doi. 10.3390/mi12030291
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- Article
High-Yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication.
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- Journal of Electronic Materials, 2006, v. 35, n. 4, p. 670, doi. 10.1007/s11664-006-0118-9
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- Article
Ohmic Contact Using the Si Nano-Interlayer for Undoped-AlGaN/GaN Heterostructures.
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- Journal of Electronic Materials, 2006, v. 35, n. 3, p. 406, doi. 10.1007/BF02690526
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- Article
Influence of Low-Field-Mobility-Related Issues on SiC Metal-Semiconductor Field-Effect Transistor Performance.
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- Journal of Electronic Materials, 2005, v. 34, n. 4, p. 330, doi. 10.1007/s11664-005-0105-6
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- Article
Influence of Si<sub>3</sub>N<sub>4</sub> Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 908, doi. 10.1007/s11664-004-0219-2
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- Article
Low-Frequency Noise Characteristics in HfO 2 -Based Metal-Ferroelectric-Metal Capacitors.
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- Materials (1996-1944), 2022, v. 15, n. 21, p. 7475, doi. 10.3390/ma15217475
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- Article
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate.
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- Materials (1996-1944), 2020, v. 13, n. 7, p. 1538, doi. 10.3390/ma13071538
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- Article
Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator.
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- Materials (1996-1944), 2019, v. 12, n. 23, p. 3968, doi. 10.3390/ma12233968
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- Article
p-GaN/AlGaN/GaN E-mode FET 제작을 위한 선택적 GaN 식각 공정 개발.
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- Journal of the Korea Institute of Information & Communication Engineering, 2020, v. 24, n. 2, p. 320, doi. 10.6109/jkiice.2020.24.2.321
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- Article
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition.
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- Crystals (2073-4352), 2021, v. 11, n. 4, p. 405, doi. 10.3390/cryst11040405
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- Article
Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs.
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- Crystals (2073-4352), 2020, v. 10, n. 9, p. 842, doi. 10.3390/cryst10090842
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- Article
Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O 2 and BCl 3 Plasma.
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- Coatings (2079-6412), 2021, v. 11, n. 3, p. 268, doi. 10.3390/coatings11030268
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- Article
Delta‐Doped β‐(Al<sub>0.17</sub>Ga<sub>0.83</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Double‐Channel Heterostructure MODFETs.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 20, p. 1, doi. 10.1002/pssa.202100842
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- Article
β‐(Al<sub>0.17</sub>Ga<sub>0.83</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 12, p. 1, doi. 10.1002/pssa.202100732
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- Article
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900695
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- Article
High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700650
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- Article
High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN <sub>x</sub> MIS structure.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600726
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- Article
High Selectivity Hydrogen Gas Sensor Based on WO 3 /Pd-AlGaN/GaN HEMTs.
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- Sensors (14248220), 2023, v. 23, n. 7, p. 3465, doi. 10.3390/s23073465
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- Article
Special issue on SoC and AI processors.
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- ETRI Journal, 2020, v. 42, n. 4, p. 465, doi. 10.4218/etr2.12316
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- Article
Electrical properties of InGaN grown by molecular beam epitaxy.
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- Physica Status Solidi (B), 2008, v. 245, n. 5, p. 868, doi. 10.1002/pssb.200778710
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- Article
Modulation of Surface Barrier in AlGaN/GaN Heterostructures.
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- Physica Status Solidi (B), 2002, v. 234, n. 3, p. 734, doi. 10.1002/1521-3951(200212)234:3<734::AID-PSSB734>3.0.CO;2-C
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- Article
Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode.
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- Micromachines, 2023, v. 14, n. 11, p. 2005, doi. 10.3390/mi14112005
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- Article