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- Title
Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique.
- Authors
Pape, Sebastian; Fernández García, Marcos; Moll, Michael; Wiehe, Moritz
- Abstract
The Two-Photon Absorption–Transient Current Technique (TPA-TCT) is a device characterisation technique that enables three-dimensional spatial resolution. Laser light in the quadratic absorption regime is employed to generate excess charge carriers only in a small volume around the focal spot. The drift of the excess charge carriers is studied to obtain information about the device under test. Neutron-, proton-, and gamma-irradiated p-type pad silicon detectors up to equivalent fluences of about 7 × 1015 n eq / c m 2 and a dose of 186 M r a d are investigated to study irradiation-induced effects on the TPA-TCT. Neutron and proton irradiation lead to additional linear absorption, which does not occur in gamma-irradiated detectors. The additional absorption is related to cluster damage, and the absorption scales according to the non-ionising energy loss. The influence of irradiation on the two-photon absorption coefficient is investigated, as well as potential laser beam depletion by the irradiation-induced linear absorption. Further, the electric field in neutron- and proton-irradiated pad detectors at an equivalent fluence of about 7 × 1015 n eq / c m 2 is investigated, where the space charge of the proton-irradiated devices appears inverted compared to the neutron-irradiated device.
- Subjects
SILICON detectors; ABSORPTION coefficients; SPACE charge; CHARGE carriers; RADIATION damage; NEUTRON irradiation; GAMMA rays
- Publication
Sensors (14248220), 2024, Vol 24, Issue 16, p5443
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s24165443