We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
HgCdTe quantum wells grown by molecular beam epitaxy.
- Authors
Dvoretsky, S. A.; Ikusov, D. G.; Kvon, Z. D.; Mikhailov, N. N.; Remesnik, V. G.; Smirnov, R. N.; Sidorov, Yu. G.; Shvets, V. A.
- Abstract
CdxHg1-xTe-based (x = 0 - 0.25) quantum wells (QWs) of 8 - 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were x ∼ 0.7 mol.frac. and d ∼ 35 nm, respectively, at both sides of the quantum well. The thickness and composition of epilayers during the growth were controlled by ellipsometry in situ. It was shown that the accuracy of thickness and composition were Δx = ± 0.002, Δd = ± 0.5 nm. The central part of spacers (10 nm thick) was doped by indium up to a carrier concentration of ∼1015 cm-3. A CdTe cap layer 40 nm in thickness was grown to protect QW. The compositions of the spacer and QWs were determined by measuring the ?1 and ?1+Δ1 peaks in reflection spectra using layer-by-layer chemical etching. The galvanomagnetic investigations (the range of magnetic fields was 0 - 13 T) of the grown QW showed the presence of a 2D electron gas in all the samples. The 2D electron mobility μe = (2.4 - 3.5)×105 cm²/(V·s) for the concentrations N = (1.5 - 3)×1011 cm-2 (x < 0.11) that confirms a high quality of the grown QWs.
- Subjects
QUANTUM wells; MOLECULAR beam epitaxy; ELLIPSOMETRY; GALVANOMAGNETIC effects; FREE electron theory of metals; SEMICONDUCTOR industry
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, Vol 10, Issue 4, p47
- ISSN
1560-8034
- Publication type
Article