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- Title
Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target.
- Authors
Zhu, Guisheng; Yang, Zupei
- Abstract
Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100-250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500-800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.
- Subjects
MAGNETRON sputtering; ANNEALING of metals; TEMPERATURE effect; INDIUM tin oxide; THIN films; QUARTZ crystals; POWDER metallurgy
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 10, p3646
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1298-8