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- Title
Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaInP/GaAs structure.
- Authors
Kınacı, B.; Özen, Y.; Kızılkaya, K.; Asar, T.; Çetin, S.; Boyalı, E.; Öztürk, M.; Memmedli, T.; Özçelik, S.
- Abstract
The structural, optical and morphological properties of Ga-rich GaInP layers with various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs substrates by using Molecular Beam Epitaxy technique are presented in this study. The GaInP/GaAs structures ( S1, S2 and S3) have been evaluated by means of high resolution X-ray diffraction, photoluminescence (PL) and atomic force microscopy measurements at room temperature. Experimental forward and reverse bias current-voltage ( I- V) characteristics of structure S3 was investigated at room temperature due to its better characteristics when compared to the other two samples. The main electrical parameters such as ideality factor ( n), barrier height (Φ) and series resistance ( R) were extracted from forward bias I- V characteristics and Cheung's function. In addition, Hall measurements were carried out as a function of temperature (30-300 K) and at a magnetic field of 0.4 T were presented for structure S3.
- Subjects
ALLOYS; GALLIUM; EPITAXY; MAGNETIC fields; FIELD theory (Physics)
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 4, p1375
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-012-0937-9